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      Maximum Ratings (at TA=25°C unless otherwise noted) Parameter Symbol CDBMT 220-HF Unit Repetitive peak reverse voltage Continuous reverse voltage RMS voltage Forward rectified current Maximum forward voltage @ IF=2.0A Max. Forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC method) V R=VRRM TJ=25°C Max.Reverse current V R=VRRM TJ=100°C Typ. Thermal resistance (Junction to ambient) Typ. Diode Junction capacitance (Note 1) Reverse V oltage: 20 to 100 Volts Forward Current: 2.0 Amp RoHS Device Halogen Free Dimensions in inches and (millimeter) CDBMT220-HF Thru. CDBMT2100-HF Page 1 QW-JB026 Low Profile SMD Schottky Barrier Rectifiers REV: A Comchip Technology CO., LTD. SOD-123H 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.055(1.4) 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. VRRM VR VRMS IO VF IFSM IR RθJA CJ TJ CDBMT 240-HF CDBMT 260-HF CDBMT 280-HF CDBMT 2100-HF 20 20 14 40 40 28 60 60 42 2.0 0.70 50 0.5 10 85 80 80 56 100 100 70 V V V A V A mA O C/W OC 0.50 0.85 Note : 1. F=1MHz and applied 4V DC reverse voltage Operating temperature Storage temperature range TSTG -65 to +175 OC -55 to +125 -55 to +150 160 PF CDBMT 230-HF 30 30 21 CDBMT 250-HF 50 50 35 0.031(0.8) Typ. Features Mechanical data -Case: Molded plastic, SOD-123H/MINI SMA -T erminals: Solderable per MIL-STD-750, Method 2026. -Polarity: Indicated by cathode band. -W eight: 0.011 grams approx. -Mounting Position: any -Epoxy: UL94-V0 rated flame retardant. -Low power loss,high ef ficiency. -High current capability,low forward voltage drop. -High surge capability . -Guarding for overvoltage protection. -Ultra high-speed switching. -Excellent power dissipation of fers better reverse leakage current and thermal resistance. -Low profile package is 40% thinner than standards SOD-123. -Silicon epitaxial planar chip,metal silicon junction. -Lead-free part meets environmental standards of MIL-STD-19500/228 |
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